|  ZhETF, Vol. 89, 
No. 5,
p. 1692 (November 1985)
 (English translation - JETP, 
	Vol. 62, 
	No. 5,
	p. 976,
	November 1985
)
 
 The issue content is only available in english translation.
 
 
 
	Energy gaps and the role of disorder under conditions of fractional quantization of the Hall resistance in silicon metal-oxide-semiconductor structures
I.V. Kukushkin, V.B. Timofeev
 
 Received: March 28, 1985
 
 
 
 
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