MAGNETORESISTIVITY IN A TILTED MAGNETIC FIELD IN p- Si/SiGe/Si HETEROSTRUCTURES WITH AN ANISOTROPIC g-FACTOR. PART II
Drichko I.L., Smirnov I.Yu., Suslov A.V., Mironov O.A., Leadley D.R.

Поступила в редакцию: 25 Октября 2011

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The magnetoresistance components ρ_xx and ρ_xy were measured in two p- Si/SiGe/Si quantum wells that have an anisotropic g-factor in a tilted magnetic field as a function of the temperature, field, and tilt angle. Activation energy measurements demonstrate the existence of a ferromagnetic-paramagnetic (F-P) transition for the sample with the hole density p=2• 10¹¹ cm^-2. This transition is due to the crossing of the and Landau levels. However, in another sample, with p=7.2• 10¹⁰ cm^-2, the and Landau levels coincide for angles θ=0-. Only for do the levels start to diverge which, in turn, results in the energy gap opening.