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ZhETF, Vol. 142, No. 3, p. 542 (September 2012)
(English translation - JETP, Vol. 115, No. 3, p. 480, September 2012 available online at www.springer.com )

MAGNETORESISTIVITY IN A TILTED MAGNETIC FIELD IN p- Si/SiGe/Si HETEROSTRUCTURES WITH AN ANISOTROPIC g-FACTOR. PART II
Drichko I.L., Smirnov I.Yu., Suslov A.V., Mironov O.A., Leadley D.R.

Received: October 25, 2011

DJVU (204.5K) PDF (1141.9K)

The magnetoresistance components ρ_xx and ρ_xy were measured in two p- Si/SiGe/Si quantum wells that have an anisotropic g-factor in a tilted magnetic field as a function of the temperature, field, and tilt angle. Activation energy measurements demonstrate the existence of a ferromagnetic-paramagnetic (F-P) transition for the sample with the hole density p=2• 10¹¹ cm^-2. This transition is due to the crossing of the $0\uparrow$ and $1\downarrow$ Landau levels. However, in another sample, with p=7.2• 10¹⁰ cm^-2, the $0\uparrow$ and $1\downarrow$ Landau levels coincide for angles θ=0- $70^\circ$ . Only for $\theta>70^\circ$ do the levels start to diverge which, in turn, results in the energy gap opening.

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