JETP, Vol. 42,
No. 3,
p. 503 (October 1975)
(Russian original - ZhETF,
Vol. 69,
No. 3,
p. 990,
October 1975
)
Concerning the mechanism of formation of the diode effect in silicon under the influence of an individual dislocation
V.G. Eremenko, V.I. Nikitenko, A.B. Yakimov
Received: March 24, 1975
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