ЖЭТФ, Том 142,
стр. 1212 (Декабрь 2012)
(Английский перевод - JETP,
Vol. 115, No 6,
доступен on-line на www.springer.com
NEGATIVE DIFFERENTIAL CONDUCTANCE IN InAs WIRE BASED DOUBLE QUANTUM DOT INDUCED BY A CHARGED AFM TIP
Zhukov A.A., Volk Ch., Winden A., Hardtdegen H., Schapers Th.
Поступила в редакцию: 6 Апреля 2012
We investigate the conductance of an InAs nanowire in the nonlinear regime in the case of low electron density where the wire is split into quantum dots connected in series. The negative differential conductance in the wire is initiated by means of a charged atomic force microscope tip adjusting the transparency of the tunneling barrier between two adjoining quantum dots. We confirm that the negative differential conductance arises due to the resonant tunneling between these two adjoining quantum dots. The influence of the transparency of the blocking barriers and the relative position of energy states in the adjoining dots on the decrease in the negative differential conductance is investigated in detail.