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ZhETF, Vol. 94, No. 12, p. 270 (December 1988)
(English translation - JETP, Vol. 67, No. 6(12), p. 2544, December 1988 )

The issue content is only available in english translation.

On the role of "derelaxation" of the (110) surface of GaAs in the formation of an Ag-GaAs Schottky barrier at 10 K
V. Yu. Aristov, I.L. Bolotin, V.A. Grazhulis

Received: April 27, 1988

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