ZhETF, Vol. 166,
No. 2,
p. 255 (August 2024)
(English translation - JETP,
Vol. 139, No. 2,
August 2024
available online at www.springer.com
)
Fabrication and study of the memristor crossbar array
Samsonova A., Yegiyan S., Klimenko O., Antonov V.N., Paradezhenko G., Prodan D., Pervishko A., Yudin D., Brilliantov N.
Received: February 22, 2024
DOI: 10.31857/S004445102408011X
We study the formation of the conductive channels in α -Si memristors and demonstrate their operation in the crossbar array. The latter can be utilised as the basic component of the neuromorphic chip tailored for edge computing. The conductive channels in α -Si are formed by the migration of Ag along with Cu ions. Such a channel has switching current-voltage characteristics at high bias, Vbiasbias<0.5V. Memristor can be re-programmed to different resistance states with short voltage pulses of amplitude above 2 V. We demonstrate the programming of the memristor crossbar array and its operation in vector-by-matrix multiplication with an 87% accuracy.
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