ZhETF, Vol. 104,
No. 3,
p. 3126 (September 1993)
(English translation - JETP,
Vol. 77,
No. 3,
p. 465,
September 1993
)
The issue content is only available in english translation.
Anomalies in the structural and electrical properties of the amorphous semiconductor a-GaSb:Ge
V.V. Brazhkin, A.G. Lyapin, S.V. Popova, S.V. Demishev, Yu. V. Kosichkin, D.G. Lunts, N.E. Sluchanko, S.V. Frolov
Received: March 10, 1993
|
|
Golden Pages
PDF (526.1K)