JETP, Vol. 67,
No. 12,
p. 2544 (December 1988)
(Russian original - ZhETF,
Vol. 94,
No. 6(12),
p. 270,
December 1988
)
On the role of "derelaxation" of the (110) surface of GaAs in the formation of an Ag-GaAs Schottky barrier at 10 K
V. Yu. Aristov, I.L. Bolotin, V.A. Grazhulis
Received: April 27, 1988
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